Does the Auger recombination co-efficient of hole and electron of any semiconductor depends on material only or also on defects?? i.e. Does Auger recombination co-efficient is inherently material dependent and varies from material to material?? Can auger coefficient be 10^-40 cm^6/s ever??
Here is auger coefficients of some of the semiconducting materials.
http://www.iue.tuwien.ac.at/phd/quay/node43.html
Hello,
Auger recombination is an intrinsic process depending on material properties, because two electrons collide in the vicinity of a hole which leads to a non-radiative e-h recombination event. So it will differ from one material to another. However, defect-related Auger recombination has been observed in heavily doped semiconductors and semiconductor crystals.
For more information you can also check the links below.
https://eng.libretexts.org/Bookshelves/Materials_Science/Supplemental_Modules_(Materials_Science)/The_Science_of_Solar/Solar_Basics/C._Semiconductors_and_Solar_Interactions/IV._Recombination_of_Charge_Carriers/3._Auger_Recombination
Chlouba T, Trojánek F, Laube J, et al. Interplay of bimolecular and Auger recombination in photoexcited carrier dynamics in silicon nanocrystal/silicon dioxide superlattices. Sci Rep. 2018;8(1):1703. Published 2018 Jan 26. doi:10.1038/s41598-018-19967-x
Fu, H., & Zhao, Y. (2018). Efficiency droop in GaInN/GaN LEDs. Nitride Semiconductor Light-Emitting Diodes (LEDs), 299–325.doi:10.1016/b978-0-08-101942-9.00009-5
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