Diving into to the basic concept of semiconductors, we know the Base-Emitter voltage for a typical silicon based transistor is 0.7 Volts when both p type and n type are doped with silicon.
What if we could dope the either type with both extrinsic silicon material and germanium material? What theory would explain the experimental effects of doing so? If precisely, also the nearest values?
Mainak Saha
By “doped with silicon” are you referring to doping into the Si material or the dopant is Si?
The latter case is not possible since Si has a valence of four, in order to create p-type in Si-based transistor you need one with one unit less i.e., 3 and for n-type valance will be one unit higher i.e., 5.
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