In order to simulate nanowire ZnO based devices, I want to use effective DOS of both electron and hole. I also need its electron affinity. Unfortunately I could not find any thing about mentioned parameters.
Masoud Ata
Nc and Nv are given by :
Nc = 2 * (2*pi*me*K*T/h^2)^(3/2)
Nv = 2 * (2*pi*mh*K*T/h^2)^(3/2)
and me and mh for ZnO are :
me = 0.27 * m0 , mh = 1.21 * m0 :)
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Jerome Crocco
keep in mind for your nanowire, Nc and Nv should be for Wire, not the bulk which Masoud Ata has commented.
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