I fabricated a pt-porous si schottky diode as a gas sensor. Adjacent to NO2 or NO gases I expected to have a low breakdown voltage (in constant current) or high current (in constant voltage) due to electric field variation in tips of pores, but the result is vice versa. What do you think about this problem?
You can post your results and your experimental configuration (image)
Dear Dilek
Thanks for your response
Unfortunately I do not have any access to my data right now
If it is possible to help me, I appreciate you
also I think it might be caused by single electron effect.
Hi Isik and Reza
Thanks Reza for helping me to share my problem here, i'm newbie in this site and hadn't account so asked reza to share this with others here
Now i myself can continue the discussion.
Hi Mehdi,
Is it possible to see another measurement where you started the NO concentration from 0 ppm for some time (i.e. 100 sec)? I see that you increased the NO concentration right away I am not sure if it is the best way to do it. Because you do not have a reference point.
Also, is this the only measurement you did or do you see these results constantly on many samples? If so I suggest you to repeat the measurement. Also, the quality of the substrates that you use, the quality of the porous Si and how pure it is after preparation is important.
I am not sure if it is the sample preparation or something else at the moment.
This illustration is cropped from a long time test procedure and this result is repeated for many times.
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