Why use Tungsten for Buried Word Line?

08 December 2024 1 8K Report

When implementing metal gate of MOSFET or FinFET, only TiN was used, but I wonder why when implementing Buried Word Line DRAM, tungsten is used as Metal Gate and TiN is used only as Barrier Metal. Can't I just form Word Line with TiN?

Yj Chip

maybe you can find answer in this paper

10.1109/IRPS.2014.6860602

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