While Al2O3 has 3 gm/cc and Tin oxide has 7 gm/cc measured on as low as 8nm films on same substrate, so how a rarer material can provide seeding to a denser material? As it seems that in rarer (atomic density of SnO2 is ~1.57 times to Al2O3) material, atoms are far away and would hamper growth of denser material. Both films are amorphous and it seems that 8nm can grow dense so interface should also be better in denser thin film.

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