Here I have a question about band gap of metalic oxide semiconductor, The UV-vis absorbtion spectrum shows that the band gap of my sample increased with pressure, but the band gap decreased after continously compression, and there is a point of inflexion in 13 GPa, where is the amorphous point of my material, I don't know how to explain this phenomenon and I'm here to seek help.
My band gap spectrum is attached below.
Dear Jia Shufan,
It may be due to the change the grain size and the stress in the crystal structure. Their interpretation is after studying the structural properties of these films.
Good continuity
Thank you Labidi Herissi , Actually my sample were load in DAC(Diamond Anvil Cell),I think it cannot simply consider the grain size and the properties of films. I didn't find anything about band gap and calculation related to my sample.
Maybe with the increased pressure you have a change in the crystalline phase of your material.
i suggest to study the Crystallinity of your material vs pressure.
- Badges
- Science method
- Similar topics
- Methodology
- Absorption Spectroscopy