hi im studying inorganic material as HIL in OLED.
i sysnthesis NiO nanoparticles by was of solvothermal as HIL material. and i fabricated OLED devices that have the structure of ITO/NiO/PVK/QD/ZnO/Al.
but when i measured J-L-V, current density was so high 10~1000mA/cm^2 in 0~10V.
so i observed the characteristics of NiO nanoparticle.
at first, the result of AFM on NiO surface is that roughness RMS is about 4.2. the surface was so bad.
and to see the current characteristics, i fabricated ITO/NiO/Al.
inhere i found that current characteristics are non rectifying but not rectifying.
i think that this sturcture should have a rectifying property.
but i don't know why this structure have non-rectifying property.
the cause i think is aggregation of NiO nanoparticles.
As the particles aggregate with each other, NiO NPs lose property and the surface condition of NiO is bad.
is this correct?
if there is another reason, what is it?
is there anyone who have and had experience like this?
If possible, could you show, please,
1) a photo, and/or
2) some i-V, [-Vmax, +Vmax],
from your devices ?
Из-за разных первых ионизационных потенциалов атомов и, как следствие - разных работ выхода используемых материалов
См. например
1. Ordin S.V., “C & BN-Foundation for Atomic-Crystalline Orbitals”, GJSFR-A Volume 18, Issue 5, Version 1.0, pp. 16-47,
https://globaljournals.org/GJSFR_Volume18/E-Journal_GJSFR_(A)_Vol_18_Issue_5.pdf,
https://globaljournals.org/GJSFR_Volume18/3-C-&-BN-Foundation.pdf
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what is the thickness of nickel oxide, and contacts? If thickness is too thin then tunneling is common. Did you try different thicknesses ? Is nickel oxide amorphous or crystalline?
thank you for reply.
i tried to control different thickness through different concetration of NiO solution.
but not exactly. i think.. thickness is enough. and nickel oxide is crystalline.
attached photo is J-V graph of ITO/NiO/Al.
Could this characteristic be caused by the poor surface that effect from the aggregation of NiO nanoparticle?
Yes[1].
Also, this side effect will be, more, clear, if you could (re)measure i-V characteristic curves, using four (4= 2 on ITO + 2 on Al) point electrical contacts, to avoid the parasitic[2] contact and (ITO and Al) electrodes' resistance(s)[3]. However, EIS[4] is the best diagnostic tool for this debugging task.
1. Your question.: Could this characteristic be caused by the poor surface that effect from the aggregation of NiO nanoparticle?
2. Four Point Probe I-V Electrical Measurements Using the Zyvex Test System Employing a Keithley 4200 http://www.zyvex.com/Documents/9702.PDF
3. https://www.researchgate.net/post/Electrical_properties_of_ultra_thin_film
4. Using the same 4 contacts for EIS, also.
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