To compare and evaluate the PSD of the submicron powders, I have chosen to characterise them using PSD in SEM (scanning electron microscopy) and PSD in LD (laser diffraction) and compare them to support the result from the LD. In this regard, I have used the drop-casting technique to image the powder on the silicon wafer (stuck on the stub) and subsequently performed the PSD. The result of the SEM is the number-based distribution, and LD is volume-based. I want to write about the advantages and disadvantages of each technique and why they are comparable or not.

I'm seeking help in addressing the concerns mentioned above as part of my chapter's results and discussion.

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