why efficiency of solar cell decreases with increase in doping level of p-type region in PC1D software?(Asked by Deepika Jamwal, research scholar Jammu university).
Dear Veenu,
welcome!,
In order to interpret your results correctly , you have to tell us how does the reverse saturation current varies with the doping of the p-type substrate doping concentration ans also how does the short circuit current varies with substrate doping.
The increase of the doping has to effects; it decreases the lifetime of the minority carriers and diffusion constant as well as it decreases the minority carrier concentration which is electrons in this case.
The decrease of the diffusion coefficient and the lifetime decreases the the diffusion length and thereby decreases the photo current.
On the other side the decrease of the minority carrier concentration decreases the reverse saturation current which leads to increase in the open circuit voltage.
In the published results of the dependence of the conversion efficiency on the doping concentration of the p-substrate, one finds that the conversion efficiency increases up to doping concentration of 1x10^17/cm^3 reaching a maximum value at that doping and decreases again for higher doping. So, it depends on the investigated doping range.
I discussed this topic on research gate in the link:https://www.researchgate.net/post/What_are_the_effects_of_p-substrate_parameters_on_the_performance_of_Si_solar_cells
Best wishes
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