Recently I step into this field as a rookie, my cell is
FTO/bl-TiO2/mp-TiO2/MA0.17FA0.83PbI2.49Br0.51/X60+LiTFSI+t-BP/Au. Blocking layer from ALD system has thickness ~50 nm, mp-TiO2 is prepared from diluted paste using ethanol (w:w=1:6), spin coated at 4000 rpm. The film is then annealed at 450℃ for 30 min. Then in the Ar glovebox, the perovskite is spin coated as 1000 rpm for 15 s, 6000 rpm for 20 s. In the last 10 s the anti-solvent toluene is added (annealing at 100℃ for 10 min). Nest HTM is spin coated at 3000 rpm (X60 content is 60mM/mL). Au layer: 80 nm. At the beginning, the morphology of the perovskite film is bad, which has a hole in the center. I got Voc of 1.02 V and Jsc of 8 mA/cm2 with FF ~20%, PCE was 1.3%.
Then I prepared the planar device without mp-TiO2, and with good perovskite morphology (uniform, clear and brown) but this time, the Jsc is still low (3 mA/cm2 without enough aging time) and Voc decreases to 0.7 V. FF is also aroung 10%. The test is carried out using silver paste covering the Au. The J-V curve looks like a straight line which forms a triangle with X and Y axis.
I fell depressed because all parameters in the device fabrication is kept the same with literature. I really appreciate if anyone can offer some suggestion. Seems the series resistance is too high. But what caused the problem?