Actually i tried to deposit the SiN from ICP- CVD we found the rate is non uniform ( linear ) but SiO2 rate comes almost linear. I don't understand why it happen? what is the ideal ration of Silane and N2 for good quality of SiN depoition.?
My best guess: N2 is not very suitable as a reactant due to its poor reactiveness. IIRC (my project involving Si3N4 and TiN is years ago - the processing itself not being MY topic), the nitrogen was supplied in the form of NH3.
In contrast, O2 is quite reactive, which might explain the difference.
I concur with Mr. Dreher and Mr. Kothari, N2 gas is not the right gas to use for depositing SiN, since splitting up N2 into N-ions and radicals is difficult due to stability of nitrogen molecule. N2 in a plasma will easily form N2+ but this is not the right reactant for SiN deposition. Most commonly NH3 is used in semiconductor industry. Reaction rates are high and good quality SiN can be deposited.
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