With reference to VDS experiments of bulk detached crystals, InSb, GaSb and its doped crystal, have been grown by Vertical Directional Solidification Process (VDS-Process).

XRD diffraction patterns were obtained from the standardized and perfectly aligned instrument for the analysis of these samples, which were obtained from the binary and ternary as grown Sb-based detached crystal.

More specific VDS-Process has been used to grow In0.5Gao.5Sb, and for different doping concentration (composition) of In(1-x)GaxSb n

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