The III-V Sb-based bulk crystals have been grown by Vertical Directional Solidification process (VDS-process). The Ga(1-X)InXSb and In(1-X)GaXSb for x
Dattatray Gadkari
When crystals are grown from solutions, the driving force of the process is supersaturation.
When crystallizing from a melt, it is important to take into account the processes that affect the composition of the melt (thermal dissociation, evaporation, interaction of the melt with the environment), processes at the crystallization front, heat transfer processes in a crystal and melt, processes mass transfer (transfer of impurities due to convection and diffusion in the melt.
Dattatray Gadkari
In both cases you are dealing with isoelectronic impurities introduced in a III-V compound material:
1. In the case of In-doped GaSb and in the dilute regime (at x-In
I have corrected my initial answer written too much fast.
I agree with Martin Stutzmann that the behavior is as he describes in the alloy (not dilute) regime.
Thanks to all answers!
Agree with your information / explanation, and endorse it. In VDS-process, the entire detached crystals (L~ 65mm, d~12mm) have been grown in the vacuum sealed ampoules with identical growth conditions and parameter. The source materials (In, Ga, Sb) were taken in stoichiometric proportion. The increasing composition % (In or Ga) changed the mobility and conductivity; it reveals the changed properties along the growth direction.
A. Ga(1-X)InXSb for x
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