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Questions related from Dattatray Gadkari
With reference to VDS experiments of bulk detached crystals, InSb, GaSb and its doped crystal, have been grown by Vertical Directional Solidification Process (VDS-Process). XRD diffraction...
27 January 2022 9,829 10 View
The III-V Sb-based bulk crystals have been grown by Vertical Directional Solidification process (VDS-process). The Ga(1-X)InXSb and In(1-X)GaXSb for x
17 October 2020 5,840 4 View
We have been growing the III-Sb based bulk entire detached / contactless crystals using indigenous designed and developed the vertical directional solidification process (VDS-process). However ,...
13 June 2020 4,146 0 View
The several detached semiconductor bulk crystals (InSb, GaSb etc.) have been grown, since 1993, in our laboratory. These grown crystals showed micro and macro homogenous composition with...
04 May 2015 1,566 2 View
We have been growing bulk ternary crystal by using vertical directional solidification (VDS) technique. The qualities of the wafers cut from these ingots have been assessed by the different...
11 January 2015 6,667 0 View
HgCdTe is used for the x-ray and gamma-ray detections and it needs cooling. However, this material has inherent problem such as changes properties with time. Therefore InSb doped materials is the...
18 October 2014 989 0 View
The bulk of InSb and GaSb crystals grown by VDS have been used for infrared applications. Crystal performance needs to be improved for sensors and detectors.
17 October 2014 886 2 View
For infrared and optoelectronic devices requires high quality crystal. These crystals must be chemically and electrically homogeneously uniform bulk crystals for high device yield. The production...
27 September 2014 3,285 0 View
