Optimal condition for depositing FTO target 95:5% using sputter technique?

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Engr. Hasnain Yousuf

Increase substrate temperature during deposition to 300-400°C.
Fine-tune the argon pressure and flow rate to around 1-2 Pa and adjust Ar flow accordingly.
Introduce a small amount of oxygen (1-5%) in the sputtering gas.
Ensure uniform film thickness in the range of 100-500 nm.

Paul Lippens

You probably loose most of the F (dopant which gives you the conductivity) in the atomic transfer process (pumped off as F2). FTO is usually not deposited using magnetron sputtering but using spray pyrolisis or APCVD...