I cannot find what's the etch rate of InGaAs in H2SO4:H2O2:H2O and of InGaAs native oxide. Thanks in advance for help.
Next question: what's the composition on InGaAs native oxide?
The selectivity of H2SO4:H2O2:H2O solution, commonly known as Sulfuric Acid Peroxide Mixture (SPM), towards InGaAs and InGaAs native oxide depends on various factors such as concentration, temperature, and duration of the etching process. However, in general, SPM is selective towards InGaAs compared to its native oxide.
InGaAs is readily attacked by SPM and undergoes a rapid dissolution reaction, resulting in an etched surface. On the other hand, the native oxide on InGaAs is much more resistant to SPM and takes longer to etch. This selectivity towards InGaAs over its native oxide can be enhanced by adjusting the etching parameters such as the concentration of the etchant and the etching time.
The composition of InGaAs native oxide can vary depending on the conditions of oxide formation, such as temperature, humidity, and exposure to air. Generally, the native oxide on InGaAs is a mixture of indium oxide (In2O3), gallium oxide (Ga2O3), and arsenic oxide (As2O3). The ratio of these oxides can vary depending on the growth conditions and the stoichiometry of the InGaAs substrate.
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