In my opinion you need the high electrical power.

i think nonstoichometric oxygen content enhance conductivity of oxides and lower optical energy gap.

hello, I am doing some research on indium oxide, in my recent work , i investigate the effect of oxygen vacancies on catalytic performance of In2O3, this part of work has been published ACS sustainable chemistry and engineering. maybe some of the characterization method are helpful for you.

Thank u so much for sharing your valuable information....

Hi. I am interested to know how you deposit nanowires using e-beam evaporation. Could you shine some light on this? Regarding the properties of indium oxide: Electrical properties of most oxides originate from oxygen vacancies, thought the role of hydrogen (substitutional & interstitial) cannot be neglected. Indium oxide in its perfect stochiometric form is an insulator, but with oxygen vacancies, it becomes semiconducting and conducting depending on the amount of oxygen vacancies. You may refer to both of my papers for more detailed information. Thank you.

Oxygen vacancies increase the carrier density and by consequence the conductivity of the transparent conductive oxide. One oxygen vacancy creates basically two free carriers and is a strong scattering centre (reduces mobility of the free carriers more strongly than for instance a Sn dopant atom in ITO). Also, oxygen vacancies are not always stable: they can disappear over time. I did a recent study on this in ITO (with low % Sn) and used extra hydrogen in the magnetron sputtering plasma to increase the oxygen vacancy concentration. When working at elevated substrate temp. (about 200°C), the oxygen vacancies remained stable. For RT deposition this is normally not the case.

I am working on ZnO semiconductor material. For ZnO, oxygen vacancies are known to be the carriers which increase the conductivity of the film. These oxygen vacancies create sites as electron acceptors. So the oxygen molecules from the environment attracted to these sites creating many O2- ions on the surface of the ZnO nanowires. These ions can be modulated based on the different environment that you introduce. I think the same concept applies for In2O3. 

In2O3 as ITO (indium Tin Oxide) is influenced by oxygen concentration.The oxygen ambient has been shown to be an important parameter to control electrical and optical properties. The highest oxygen concentrations enhance the transmission property and the oxygen deficient nature (oxygen vacancies) increased the electrical conductivity of theIn2O3  thin films. Furthermore, the lattice parameters and lattice distortion are seen to vary closely with oxygen concentration ,in the sputter chamber and the length of the etching process.

read more on this paper:

Influence of Oxygen Concentration on the Performance of Ultra-Thin RF Magnetron Sputter Deposited Indium Tin Oxide Films as a Top Electrode for Photovoltaic Devices

Jephias Gwamuri, Murugesan Marikkannan , Jeyanthinath Mayandi , Patrick K. Bowen  and Joshua M. Pearce

Materials  January 2016,

hello Dr.A. Ouerdane 

Can you tell me whether Band gap also affected by Oxygen vacancies? 

 Band gap is also affected by oxygen vacancies as they can create defect states in the band gap region.

Thank you Indra Kumari

Oxygen vacancy induced band gap narrowing in semiconductor materials. This change had been verified  experimentally on SnO2 and ZnO in our laboratory. The PL measurement spectra did not give the well known band gap for the two materials. We must use heating process  to avoid the narrowing of the band. gap..We obtain 2.1 eV for SnO2 instead of 3.4 eV and 3.1eV for ZnO instead of 3.6 eV..

Oxygen vacancy induced band gap narrowing in semiconductor materials. This change had been verified  experimentally on SnO2 and ZnO in our laboratory. The PL measurement spectra did not give the well known band gap for the two materials. We must use heating process  to avoid the narrowing of the band. gap.

cher collègue

les sites vacanciers d'oxygènes créent des états localisés en dessous de la bande de conductions càd la bande interdite et par la suite elles participent dans la fluorescence