Hi all,
I am designing a calibration Kit for 2 port calibration. So for the further work, to design a load of 50 ohm we have decided for a 23 nm Titanium thin fim resistor by electron beam evaporation. In order to design the load with a specified length and width, we need to know about the resitivity of the thin film resistor.
If any one has idea about that or leads to some papers regarding it, it would be a great help.
Thank you for your help!
Cheers,
Jojo
Dear Jojo, I have evaluated the resistivity of this film at 20,6 Ohm per squire, taking into account high purity titanium. The actual value should be some more due to the size effect and impurities.@
Dear Jojo,
The sheet resistance of thin layers of Ti cannot be calculated by using the bulk value of Ti resistivity. For thin films, especially yours of 23 nm, the resistance is determined for the major part by the way you have deposited the Ti. For this you should look up Thornton's model for vapor deposition. It shows how morphology of thin layers is changed by process parameters like material melting temperature, actual surface temperature during processing and process pressure. Depending on these parameters you will get polycrystalline, microcrystalline, transition (T) structure of fibrous grains or columnar pillar growth. The average free electron path in metals is ca. 50 nm. If you go below this value in layer thickness, morphology of the film has a tremendous impact on resistivity. So you have to characterize the resistivity at this thickness of 23 nm in terms of the process settings.
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