hello, i NEED the reasons (when i know the refractive index of Amorphase Si is 3.7 and refractive index of SiN is 1.9 as in the result in attachment of some paper no mine) which let us to say the material 'SiN' SILICON NITRAIDE is a good choice to use in the application of quantum entanglement? and what is the physical method to preparing nano thin film of SiN instead of the method Plasma-enhanced chemical vapor deposition (PECVD)? can i used PLD pulse laser deposition in a chamber contains the gases like silane (SiH4) and ammonia (NH3) to prepare SiN thin film without using the the process of heating until 1400 Celsius degrees as in PECVD method?