When we measure the drain source current by applying drain source voltage of graphene contacted MoS2 tranistor before annealing and after annealing, we observed significant decrease of contact resistance after annealing compare to before annealing. What could be the appropriate reason for this observation?
There are several possible reasons: one of them is better chemical interaction at the surface, which both suppresses the potential barrier between the two materials, and changes the difference between the Fermi energy and the Dirac point of graphene (effectively doping the graphene layer). The second possibility is that the interface between the two materials becomes blurred, with interdiffusion or something similar. This would increase the effective interface area, and possibly reduce the potential barrier. We are preparing a paper on the subject, if you are interested I can send you the preprint as soon as it is ready.
In The Name Of GOD
Dear Sir
Hi!
Please see the attached refernces.They have shown that,:
"It is observed, and analytically verified that lower work functions of the contact metals lead to smaller Schottky barrier heights and consequently higher charge carrier injection through the contacts."
But what is about matching between MoS2 and Graphene due to the:
1-exsited differences between lattice constant of Graphene and MoS2
2-existed differences between hight of planar Graphene structure and buckled structure of MoS2
Probablt they are important too.
Best Regards
H.Simchi
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