I guess there is a misunderstanding here.

To my knowledge PECVD at typical temperatures of 200 °C does only lead to crystalline (we mean single crystal) growth on (100) oriented crystalline silicon wafers. This is called homoepitaxy. It can also work on (100) oriented Ge and GaAs substrates. On any of them we can grow from very thin films (nanometers) up to several microns (it is a matter of deposition time).

However, on any other substrate (glass, metal foil, plastic,...) which does not provide the rigth template for epitaxy, the obtained material is generally amorphous or micro- nano-crystalline.

Film thickness varies from a few nanometers (nm) to tens of micrometers (µm), .Tthe conventional, first-generation crystalline silicon solar cell (c-Si), that uses wafers of up to 200 µm thick.

Madhukar Baburao Deshmukh Do you mean that we can get a layer of a few nanometers of crystalline silicon with a gap energy of 1.12 eV? Can you please provide some experimental references? Thank you in advance.

This is Si atom band gap, possible to get because in PECVD you can get less dense film, so screening effect will be less...and probably you may get this level..

We have been working of PECVD epitaxy of silicon at low temperature (175 °C) and transferring the epitaxial films onto foreign substrates (glass, polymer).

So yes, it is possible to have ultrathin c-Si on any substrate, and not just silicon. The process also works for Ge, SiGe and heteroepitaxy on GaAs

Nagesh Sharma Thank you for your answer.

Morteza Maleki Thank you for your contribution.

That's what I thought, but with the new deposition techniques I was hoping that there was a way to deposit crystalline silicon in thin layers!

Pere Roca Cabarrocas

Thank you Pere for your precious contribution. I think you are in the best position to answer this question.

However, I have not found any article which proves that it is crystalline silicon which is obtained in thin layers. Generally we speak of polycrystalline silicon.

Best regards

Djaaffar

Please take a look at our paper:

Romain Cariou, Wanghua Chen, Ismael Cosme-Bolanos, Jean-Luc Maurice, Martin Foldyna, Valerie Depauw, Gilles Patriarche, Alexandre Gaucher, Andrea Cattoni, Ines Massiot, Stéphane Collin, Emmanuel Cadel, Philippe Pareige and Pere Roca i Cabarrocas : “Ultra-thin PECVD epitaxial Si solar cells on glass via low temperature transfer process”. Progress in Photovoltaics: Research and Applications 24 (2016) pp/ 1075-1084. DOI: 10.1002/pip.2762

Pere Roca Cabarrocas

I will read this paper carfully.

Thank you for your usual availability.

In LPCVD keep temp above 625C and pressure 220mT and thickness nearly 1micron, but above 2000angstrom u may get

You can refer my research paper available in research gate.

Nagesh Sharma Thank you for your answer.

I guess there is a misunderstanding here.

To my knowledge PECVD at typical temperatures of 200 °C does only lead to crystalline (we mean single crystal) growth on (100) oriented crystalline silicon wafers. This is called homoepitaxy. It can also work on (100) oriented Ge and GaAs substrates. On any of them we can grow from very thin films (nanometers) up to several microns (it is a matter of deposition time).

However, on any other substrate (glass, metal foil, plastic,...) which does not provide the rigth template for epitaxy, the obtained material is generally amorphous or micro- nano-crystalline.

Akhilesh Pandey

Pere Roca Cabarrocas Thank you for clarifying this very important point. The clarifications you provided in your answer will be extremely helpful to me.

Best regards.

In PECVD , if we have precursor in liquid form then how can we convert it into gaseous form to pour it into the chamber.

Does we need some kind of instrument for conversion of precursor into gaseous form??

Dear Deepak, in PECVD all precursors are in gaseous forms, u can refer my research articles available in researchgate.

Nagesh Sharma sir thanks for your valuable response. But i have attached a link(Chapter Preparation of ZnO Photocatalyst by Plasma-Enhanced Vapor De...

Dear Deepak, Pl read this research article