What is the mechanism of Burstein - Moss blue shift in heavily doped p-type INDIRECT BAND semiconductor?

Initially in p - type semiconductor, the Fermi level is closer to valence band.

Due to heavy doping, there will be closely packed localised band system within the indirect bandgap.

Where does this localised states exist in the bandgap and how does it contribute to the Burstein - Moss blue shift in absorption spectroscopy?

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