For the usual doping process, within the resonable bonds we can say that the value of oxygen excess  is not very well established, but the ambient highest Tc suggests optimal doping. Remember the GS of the generic phase diagram for the class of layered copper oxide SCs in ½ filled case: We are in the AF Mott insulator state first. We dope hole with small doses.

Which one of the following scenarios is physically true?

1. When the hole concentration started to increase gradually, this causes to create RVB pairs. In a certain value of doping the pair and hole concentration will balance between each other and we will have optimal doping value of intermediate regime.

2. The pairs already exist. When the holes are doped, this will destroys the pairs. In the corresponding doping value, again we will have an optima.

Afterwards, we will begin to loose holes and pairs balance, then a metallic Fermi liquid will occurs in overdoped regime.

Additionally; what is the actual charge carrier for High-Tc SCs? Doublons, holes or pairs?

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