It is related to high voltage sputtering. What is the purpose of using this technique,
on which law it is working?
In conventional ion implantation ions are extracted from a remote ion source (usually a very dense plasma) and accelerated to high energy in a beam line and injected into the surface of a sample where they interact with target atoms, lose energy, create defects and come to rest. The incorporated ions and damage created can change surface properties and composition and can delivery improvements in performance, e.g. B or P doping of silicon for semiconductor devices, nitrogen in steel for wear resistance. The conventional implantation process is line of sight and is most suitable for flat substrates. However, many components have some three dimensional structure and require manipulation in the ion beam to get complete coverage increasing process time and complexity of process plant. The plasma imersion ion implantation process breaks down the separation between the plasma in the ion source and the components to be treated. A plasma is generated around the components which are immersed in it. A high voltage is then pulsed on the samples (or their holders) which extracts the ions from the plasma and accelerates them towards the components treating all outward facing surfaces at the same time. It can reduce the time to produce a treatment on a three dimensional product.
In conventional ion implantation ions are extracted from a remote ion source (usually a very dense plasma) and accelerated to high energy in a beam line and injected into the surface of a sample where they interact with target atoms, lose energy, create defects and come to rest. The incorporated ions and damage created can change surface properties and composition and can delivery improvements in performance, e.g. B or P doping of silicon for semiconductor devices, nitrogen in steel for wear resistance. The conventional implantation process is line of sight and is most suitable for flat substrates. However, many components have some three dimensional structure and require manipulation in the ion beam to get complete coverage increasing process time and complexity of process plant. The plasma imersion ion implantation process breaks down the separation between the plasma in the ion source and the components to be treated. A plasma is generated around the components which are immersed in it. A high voltage is then pulsed on the samples (or their holders) which extracts the ions from the plasma and accelerates them towards the components treating all outward facing surfaces at the same time. It can reduce the time to produce a treatment on a three dimensional product.
Dear Simeon, thank you for sharing this question with me but I am only weakly acquainted with this method and, additonally you have got an excellent explanation from Steve.
Respected Simeon, I am working in nuclear and particle physics in addition with polymer science. I do not know about this.
Dear Simeon,
The answer of dr Steve Bull is in order .
But i want to add some comment concerning the similarities and differences to the high voltage sputtering:
- The apparatus is similar
- The plasma gas is different. In the cathodic sputtering process the plasma is formed by ionizing an inert gas like Argon while in ion implanting the gas is a volatile species of the doping atoms.
- Other great difference is in the value of the high voltage. In ion implanting it is just sufficient to introduce the doping species in the material while in sputtering the ion must be strong enough to convert the target material int dust.
Thank you Simeon for your question
Thank you Bull for your satisfactory answer.
.
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