I am looking at determining the strain in Bi4Ti3O12 thin films on Si/Ti/Pt substrates using novel doping. I deposited the thin film using a d RF magnetron sputtering, and producing a non-doped target  for a reference thin film would take to long.

What is the best way to quantify strain from the peak shift for my thin film? would it be acceptable to use compare it to the power diffraction pattern as calculated using the Mercury software. Or should I compare it to a thin film using platinumised substrates reported elsewhere?

Best Wishes

David

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