I am looking at the integration of Bi4Ti3O12 thin films on Ultrananocrystaline diamond (UNCD) substrates. I deposit my thin films using RF-Sputtering, but am unable to do in-situ substrate heating, so I rely on post deposition annealing to crystallize the thin films. I normally perform annealing in ambient atmosphere, producing good insulative, ferroelectric and dielectric properties.
However, due to the nature of the UNCD substrate, I have been limited to annealing the films under vacuum conditions. From impedance spectroscopy, I have determined the films to possess a dielectric constant of 80, about 60% of what it should be when annealed in atmosphere. I am looking for references to confirm the dielectric properties of BTO thin films when annealed in vacuum. If anyone could provide any, I would be extremely grateful.
Best Wishes
Jamie
Dear Jamie,
About BTO dielectric properties you can find some resources like:
Available online at www.sciencedirect.com Physics Procedia 32 ( 2012 ) 938 – 946, Anisotropic electrical properties of epitaxial Hf-doped
Bi4Ti3O12 thin films
or
attached file
and for UNCD substrate - I recommend you the Diamond and Related Materials Elsevier Journal.
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