I want to get as much as the flatness of e-beam evaporated Au on Si02/Si wafers. So I want to anneal au deposited Si02/Si wafers. The thickness of Si02 is 2nm. Is there any appropriate time and thickness of Si02 (because I do not want to diffuse au into Si02)to get the flatness so I can transfer to the small pieces using the template Stripping Process?

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