Quasi neutrality refers to apparent charge neutrality and a quasi neutral region is apparently neutral region where electric field is zero.
In a semiconductor, mobile carrier can go to different position, gather at a small locality responding to applied bias or concentration gradient. That makes a charged region and rises an electric field within the material/device. But that charged region can be a small part of the device, and the rest of it is quasi neutral.
For a diode, region other than "Depletion region" is quasi neutral, and for MOSFET or HEMT, the bulk (substrate) region is so. For nanowire FET, only source and drain are quasi neutral.
From mathematical point of view, in quasi neutral region, Neumann boundary condition can be applied.
Quasi neutrality refers to apparent charge neutrality and a quasi neutral region is apparently neutral region where electric field is zero.
In a semiconductor, mobile carrier can go to different position, gather at a small locality responding to applied bias or concentration gradient. That makes a charged region and rises an electric field within the material/device. But that charged region can be a small part of the device, and the rest of it is quasi neutral.
For a diode, region other than "Depletion region" is quasi neutral, and for MOSFET or HEMT, the bulk (substrate) region is so. For nanowire FET, only source and drain are quasi neutral.
From mathematical point of view, in quasi neutral region, Neumann boundary condition can be applied.
as far as my knowledge that approximation is used between the P and N type regions in a semiconductor.
Suppose take the case of excess carriers, how this quasi-neutrality conditions hold?
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