Thank you for answering my question, dear Sir/Madam:
I tried to simulate an FTJ structure with ATLAS in Silvaco TCAD, and this warning occured:
Warning: Internal error in linear solver.
This situation rarely occurs in normal circumstances.
This error could indicate a ill-defined problem.
Check structure and models for possible conflicts.
Warning: Cannot trap. Cannot reduce bias
step. Choose smaller bias step size, or
check structure and or models.
below is my source code, and I wonder what's wrong with it:
go atlas
mesh outf=meshferro.str
x.m loc=0.0 spacing=0.001
x.m loc=0.1 spac=0.001
#
y.m loc=-0.3 spacing=0.01
y.m loc=0.0 spacing=0.01
y.m loc=-0.1 spacing=0.001
y.m loc=-0.108 spacing=0.001
y.m loc=0.5 spac=0.01
#
region num=1 silicon y.min=0.0
region num=2 material=tin y.max=0.0 y.min=-0.1
region num=3 material=hfo2 y.max=-0.1 y.min=-0.104
region num=4 material=zro2 y.max=-0.104 y.min=-0.108
region num=9 material=al2o3 y.max=-0.108 y.min=-0.110
region num=10 material=al y.max=-0.110 y.min=-0.3
#
electrode top name=gate
electrode bottom name=sub
#
doping region=1 conc=1e15 uniform p.type
save outf=ftj04.str
tonyplot ftj04.str
#
models region=3 ferro
material region=3 ferro.ec=20e3 ferro.pr=0.5e-6 ferro.ps=1.0e-6 ferro.epsf=200
method newton trap
#
solve vgate=-5
probe x=0 y=-0.3 dir=90 polarization
#
log outf=ferro04.log master
#
solve name=gate vfinal=5 vstep=0.05 ac freq=1e-6 direct
material region=3 ferro.ec=-20e3
#
solve name=gate vfinal=-5 vstep=-0.05 ac freq=1e-6 direct
#
tonyplot ferro04.log -set ferroex01_0.set
Dear Wang, the error is most likely due to mesh elements with obtus angles and/or sudden lsrge change in mesh spacing. Utilize smoothly varying steps or adapted mesh, e.g., on the basis of potential distribution
To answer firstly, we must know your structure and its biasing. The ionization integrals must be zero when the applied voltage is less than the breakdown voltage. It means that you bias near the breakdown. The other warning concerns the contact of electrodes to the semiconductor layers.
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