What are the methods to create a plasma in the chamber for the thin film deposition ?
First of all one has to evacuate the chamber creating high vacuum so that the air present in the chamber is removed. Then fill the suitable gas from which you want to make thin film of a particular material, e.g., silane gas for silicon thin films. The pressure of the gas should be lower than atmospheric pressure let say 1 mm of mercury. Apply high d.c. voltage in k V to produce discharge in the gas. This technique is known as glow discharge technique and has been widely used to produce amorphous films of silicon. Flow rate can be controlled by flow meters.
The plasma could be produced by many methods such as radio frequency plasma, Microwave plasma , Dc plasma etc. depending on the film you want to deposit and many parameters such as the power , gas flow rate and the pressure inside the chamber.Regarding to CVD method may you mean PECVD which usually prefer on low temperature applications such as plasma polymerization.
Dear Abbas
C V D technique has also been used for preparing thin films of alloys containing heavy elements for example Hg withTe and Cd. HgCdTe alloys have some important applications. See literature for more information.
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