The Nature Electronics article provide good reference for this topic. There are several material characterizations that can be done on heterostructure-based materials and devices such as HEMTs and SBDs. For example, a detailed characterization of single- (SH) and double-heterostructure (DH) GaN-based HEMTs developed for power switching applications has been reported. DC, pulsed, and breakdown characterizations have been performed on five different epitaxial structures (https://www.nature.com/articles/s41928-021-00611-y). I am providing you with some useful references, and if I were you then will start reading wikipedia which gives very good introduction on this topic.
(1) Single- and double-heterostructure GaN-HEMTs devices for power .... https://www.sciencedirect.com/science/article/pii/S0026271412002594.
(2) Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with ... - Springer. https://link.springer.com/article/10.1007/s40820-021-00589-4.
Thanks Kaushik but I am not looking for electrical characterizations like transfer curves, breakdown measurements etc. I want to know other possible physico-chemical material characterizations in nm range.
There are several physico-chemical material characterizations that can be done on heterostructure-based materials and devices like HEMTs and SBDs in the nm range. Some of these characterizations include luminescence properties (https://pubs.rsc.org/en/content/articlelanding/2022/tc/d1tc06033c), and another article in Science magazine, my favorite optical band gap structure, semiconducting ability, light-matter interactions, mechanical strength, and surface area (Article 2D materials and van der Waals heterostructures
).
Now, you may want to ask what specific characterization you should explore.
Recent progress in 2D material van der Waals heterostructure-based .... https://pubs.rsc.org/en/content/articlelanding/2022/tc/d1tc06033c.