What are the main reasons for gate leakage during FET characterization? We generally use 300 nm SiO2 as gate dielectric.
Main reasons of gate leakage are the quality of oxide layer and back gate formation.
Please suggest a few trending and futuristic PhD Research Topics/ Gaps in Management (preferably in Service Quality / Quality Management) in Education (preferably in Higher Education) in India....
08 April 2024 3,664 3 View
I checked the nanodrop conc of the plasmid sample and it was 1000 something. I cleaned the platform and the upper arm got mistakenly lowered and it still measured the conc around 41.Could be due...
14 January 2024 8,323 6 View
If my plasmid doesn't have Ecor1 and sal1 but i need my plasmid to have those, I am aware that i can make primers with Ecor 1 and sal1 overhangs but how is that done from the beginning?
11 September 2023 2,510 3 View
Does it have something to do with the fact that ampicillin acts only after the cells divide and kanamycin resistance has something to do with the ribosomes and then it inhibits the translation? I...
29 August 2023 4,997 1 View
Sgv was constructed and maxiprepped. The conc was 1965 ng/ul and accidently a few drops of nuclease free water got spilled in it. Can I still use the same SGV plasmid for transfection or should I...
29 August 2023 9,351 5 View
I followed maxiprep protocol and the yield was as low as 5.9ng/ul. All the steps were followed and everything was taken care of. Is it because the cultures were a month old?
21 August 2023 2,773 5 View
How do we decide which transfection it is? Does it depend on whether we used PEI buffer or electroporation?
07 August 2023 783 5 View
We use Hind 111 is used almost every time but why? How many enzymes do we have to choose per experiment?
07 August 2023 8,176 2 View
Some of us use Streptavidin coated plates.
06 August 2023 4,191 0 View
Does it have something to do with the concentration?
03 August 2023 1,547 3 View
I am getting trouble in studying the effect of channel doping variation in forksheet structure for p and nmos.
08 July 2024 2,074 0 View
Basically CMOS are used for designing the SRAM cells . How the functionality will differ if we use Multi threshold CMOS instead of CMOS generally MTcmos decrease the leakage power but it will...
28 June 2024 9,845 0 View
CALL FOR BOOK CHAPTERS (No Publication Fee) Scrivener Publishing/wiley Dear Prof,Scientist/ experts, Greetings. We are editing the book entitled " FET Devices: Post CMOS Theory and Applications...
28 May 2024 9,284 0 View
When I simulate the NMOS model in ATHENA, when I want to anneal in nitrogen atmosphere after n+ ion implantation, the annealing operation is not possible when the annealing temperature is lower...
08 April 2024 2,798 0 View
please give me the answer how to calculate the W/L ratio in analog circuits designing
15 March 2024 8,503 1 View
We are doing simulations of fdsoi ncfet in synopsis tcad can someone correctly explain how to match the ferroelectric capacitance and mos capacitance
06 March 2024 7,511 0 View
Recently i started to learn 3D NAND in sentaurus TCAD, but there seems to be some problems in GIDL ERASE. 3D NAND uses BTBT for GIDL ERASE. To implement this, I would like to know what code...
25 February 2024 1,733 0 View
Basically, we know that the N-channel MOSFET has a (+) threshold voltage. However, the graph has a value of (-) depending on the acceptor doping concentration in the substrate and oxide capture...
24 January 2024 7,817 0 View
The curve on the Id-Vd plot of the MOSFET is not smooth. How can this noise be eliminated?
18 January 2024 9,829 0 View
If the thickness of the oxide film is very small in MOSFET, does the Vth increase as the thickness decreases?
16 January 2024 962 0 View