If I deposited amorphous silicon film, the substrate temperature is120°C on polyimide, PET or Corning glass then can we anneal at 120°C for a temperature dependent electrical conductivity (I-V) measurement?
Please read the article attached.Structural changes of polycrystalline silicon layers during high temperature,annealing, by D. Lysáček, L. Válek
Structural changes of polycrystalline silicon layers during high temperature
annealing
D. Lysáček, L. Válek
Limit for the substrat temperature has to be taken care of. You can not heat PET beyond 200°C or little more depending upon make/type of PET. This info can be asked from the furnisher/vendor. For Glass, you can go upto 450°C (500°C is the limit boiling point for glass). For Quartz substrat you can go up to 900 or even 1000°C.
I use glass and quartz substrates and did annealing on above temperatures.
Try to keep the annealing temperature below 200°C in case of plastic substrates. For other substrates, you can use reasonably high temperatures.
If you don't want to change your film structure you need to stay below a certain temperature. The textbooks by Street 1991 and Fritzsche 1989 on a-Si are good sources.
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