I think so, but I remember there being a chapter in the book "Hydrogenated Amorphous Silicon" by Street (1991) that is mainly about this topic. Maybe you can look there.
By definition, dangling bonds are broken non saturated covalent bonds. They act as charge carrier traps and recombination centers. They lead to transport parameters degradation. They are partly passivated by hydrogen atoms. Energetic photons may be capable of breaking some Si- H bonds causing degradation in the material which may be accumulative with time. Dangling bonds may have different energy locations in the energy gap of silicon. The equilibrium dangling bonds may occupy the lower energy level.
The thermal equilibrium between dangling bonds and weak bonds is described by the defect pool model. Two groups pioneered this model: Bauer/ Schumm and Dean/ Powell. However, this work is from the early nineties, you can search for papers who reference their work to find more up to date publications.
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