I have this amorphous silicon, a-Si:H, film I want etch it from polyimide and I want to know how to approach it.
Selective etching of a silicon film over polyimide ('Kapton') can be achieved with: HF aqueous solution (aq.), HF + H2O2 aq., HF + H3PO4 aq., HF + Br2 or I2 aq., HNO3 + H2O2 aq.; HCl + HNO3 (aqua regia); glacial acetic acid + Br2 or I2.
Here is a link that gives a few recipes for Silicon etching (please be careful with HF if you are going to be using it):
http://www.cleanroom.byu.edu/wet_etch.phtml
We normally use HF:H2O 1:5 (or sometimes even pure HF) for etching SiO2, it's quite quick but be carefull, do not to use a glass beaker since it will etch the glass, and do not use a metal tweezer since it will wet the entire surface of the metal.
We then use KOH for etching the pure Si.
If you want to etch silicon di oxide there are two approches you can go first dry etching in which you have to use 8sscm of Ar and 200sscm of C2F6, this process of etching silicon di oxide is very slow like 2nm/min (rough estimation). The another way as people suggested you can use HF which is highly reactive if you've any other things like photoresist it started lift off after 1 min of process in hf, so be carefull dont make solution in glass beaker as well as take super precaution while etching in HF, etch rate of sio2 in hf is 0.1u/min.
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Selective etching of a silicon film over polyimide ('Kapton') can be achieved with: HF aqueous solution (aq.), HF + H2O2 aq., HF + H3PO4 aq., HF + Br2 or I2 aq., HNO3 + H2O2 aq.; HCl + HNO3 (aqua regia); glacial acetic acid + Br2 or I2.
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