Usually on SiO2/Si substrate, I usually 30nm Ti as adhesion layer between Pt (bottom electrode) and SiO2. Recently I am trying SiNix/Si wafer, the engineer recommend me Pt/Ta instead of Pt/Ti, because of silicon nitride. Is it really necessary? I thought the adhesion between Ti and Silicon nitride was still good.
Sebastian Zlotnik
I do not see the reason why Ta would be better than Ti. Have you considered Al2O3 as adhesion layer? It is reported that it may increase temperature endurance of multistructural Si wafers.
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