Spin Transfer Torque Nano Oscillators (STNOs) and Spin Hall Nano Oscillators (SHNOs) are magnetic nano oscillators driven by spin currents. Still, they differ in how they generate and utilize this spin current.
Spin Transfer Torque Nano Oscillators (STNOs): In STNOs, the spin current is directly injected into the magnetic layer from a spin-polarized current source. This causes a transfer of angular momentum to the magnetization, which can lead to a precessional motion of the magnetization if the current is strong enough. The frequency of this precession can be tuned by adjusting the current, allowing these devices to be used as microwave sources. STNOs can be realized in various structures, such as spin-valves or magnetic tunnel junctions.
Spin Hall Nano Oscillators (SHNOs): SHNOs use the Spin Hall effect to generate a spin current. These devices pass a charge current through a heavy metal layer with a large spin-orbit coupling (such as platinum). The spin Hall effect causes the electrons to deviate from their original path and accumulate on the sides of the layer, creating a transverse spin current. This spin current can then be injected into an adjacent magnetic layer, leading to a precessional motion of the magnetization similar to that in STNOs. The advantage of SHNOs is that they do not require a spin-polarized current source, which makes them potentially more efficient and easier to integrate with conventional electronics.
In summary, the main difference between STNOs and SHNOs lies in the spin current generation and injection method. STNOs inject the spin current directly into the magnetic layer, while SHNOs use the Spin Hall effect to generate a transverse spin current. This can result in differences in efficiency, tunability, and integration possibilities.