As per the literature, NiO thin films can be etched in an RIE system using Cl2- based gas. Will there be any contamination issues if I use an RIE system dedicated to III-V group material (e.g.-GaN, GaAs)?
Any kind of suggestions would be a great help for my research work.
Thanks,
I don't know the real configuration of your sample.
Would you use some resist as well, I mean is there some lithography structure? If yes, then there may not be any contamination.
you can see the following links:
1. https://www.researchgate.net/publication/51239336_Applying_computational_nanomaterials_design_to_the_reactive_ion_etching_of_NiO_thin_films_-_A_preliminary_investigation
2. https://www.researchgate.net/publication/244671360_Etch_Characteristics_of_Nickel_Oxide_Thin_Films_Using_Inductively_Coupled_Plasma_Reactive_Ion_Etching
3. https://iopscience.iop.org/article/10.1149/1.2811701/pdf
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