I am trying to make a Al2O3/InGaAs MOSCAP.When I deposit metal(gold) using shadow mask, the capacitor does not work.But if I use TiN layer between the metal and dielectric, it works.I have tried dc sputtering,thermal evaporation and e-beam evaporation for metal deposition.From literature, I have found that many had made the MOSCAP without TiN layer.Please anyone has a suggestion?
In thermal evaporation , first deposite 20nm gold with slow deposition rate . Then increase the deposition rate. High energy gold nanoparticles are penetrating the layer.
In thermal evaporation , first deposite 20nm gold with slow deposition rate . Then increase the deposition rate. High energy gold nanoparticles are penetrating the layer.In DC sputtering, use low power density.
- Badges
- Science topic
- Similar topics
- Engineering
- Electrical Engineering
- Electrodes