Hi, the grow method is thermal evaporating. I cleaned Si with Acetone&IPA&DI water and HF. I didn't have any adhesion layer as I transferred the wafer to evaporator chamber immediately after HF cleaning. The adhesion was very good before. But recently the samples will be like in the picture for unknown reasons.
OK, that sounds like the sample should be prepared suitably. Did you recently make any changes to the evaporation source like using a different crucible, a new heating wire or anything?
Do you have access to XPS, AES or EDX so you could check your Cu for impurities?