Actually I have almost everything for the experiment - chemicals, foil, CVD equipment and so on. And here is the thing - how to adjust the flow of gases?
Here you can see a part of a receipt from an article "The copper foil deposition substrate was loaded into a furnace and heated to 1,000 °C in an argon/hydrogen reducing environment to remove any native oxide on the surface of the copper. A small flow of methane was added to the gas flow."
You have to start with copper and silicon wafer substrates. You can use copper foil (25-50 μm-thick Cu foils). However, before using the foil make it annealed to a high temperature to remove the oxcide content (in case present).
You have to use three diffrent gases Ar, H2, CH4 by using three gas cylinders. You can adjust the gas flow rate by a mass flow controler (MFC).
If you do not have Annealing system (for Cu foil) you can also follow the below procedure:
1. Hydrogen gas (say 40 sccm flow rate) can be discharged by an RF power of 50-100 W for 2-3 minutes to eliminate surface oxides on the copper foil.
2. After that purge with Ar at the flow rate of 100 sccm for 2-3 minutes to remove residual hydrogen gas.
3. Then you have either you can select Ar + CH4 or H2 + CH4
Put pressure (operating condition for your graphine film) = 10 mTorr. For this inject 1 sccm of CH4. and then add Ar or H2 to achieve 10 mTorr.
4. Vary your RF power from 50-200 W and grow your film.
After trying with Ar + CH4 or H2 + CH4 combinations you can go for Ar + CH4 +H2 gases.
Good luck.
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