I know people deposit HfO using ALD, but this is too slow for the thicknesses were looking for. I've heard of evaporated HfO films as well, but I doubt the films are of good quality. If any of you could help me find some examples of people depositing some thick High K dielectric using CVD or some other method that is not extremely slow, I would really appreciate it.
Try hafnium disulfide HfS2. It evaporates easily. In any case, I grew its single crystals using direct evaporation and deposition at the cold end of the reactor.
Hi Victor,
Although ALD layers are slowly grown, the composition and quality of these layers are mostly very good. Alternatively you can grow HfO2 with PECVD technique using a Hf precursor and O2 (or N2O).These layers are usually amorphous but contain hydrogen (from the precursor) or nitrogen contaminants to some extend. Another way of depositing HfO2 is sputter deposition from a HfO2 target in a RF-magnetron system. Sputter deposited layers can be non-stoichiometric and usully need addition of some %O2 to the Ar in the plasma, to become stoichiometric. As for the morphology of sputtered layers, they can be amorphous, microcrystalline or poly crystalline. This depends mostly on the sputter pressure you use and the deposition temperature.
Dear Victor, information below may be helpful:
High-k dielectric materials play a crucial role in semiconductor devices, especially dynamic random-access memory (DRAM) capacitors. Let’s explore some deposition methods for high-k dielectrics, including those that allow for thicker films:
Hence, while ALD remains the gold standard for precise, thin high-k films, CVD and other methods allow for thicker films. Research continues to explore new materials and deposition techniques to enhance DRAM capacitor properties and meet scaling requirements.
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