The optimum bandgap for single junction semiconductor is 1.35 eV. Such material can give ideally a conversion efficiency of more than 30 percent.
The wider band gap material such as hybrid perovskite with direct gap can absorb most of the incident solar radiation in a very thin thickness lass than one um.
Therefore they save tremendous quantities of active reducing the production cost of solar cells.
The optimum bandgap for single junction semiconductor is 1.35 eV. Such material can give ideally a conversion efficiency of more than 30 percent.
The wider band gap material such as hybrid perovskite with direct gap can absorb most of the incident solar radiation in a very thin thickness lass than one um.
Therefore they save tremendous quantities of active reducing the production cost of solar cells.
As DR.Abdelhalim Zekry added an answer regarding bandgap of semiconductor but in led free PERVOSKITES SOLAR CELL which i observed for 300 days .
Perovskite MASnI3
Eg(V) 1.30
Jsc (mA/cm2) 16.8
Voc (V) 0.88
FF(%) 42
η(%) 6.4
The more extensive band hole material, for example, mixture perovskite with direct hole can retain the vast majority of the occurrence sunlight based radiation in a thickness less than one um.
Direct band gap makes perovskite tollerate shorter diffusion length .