We want to perform a lift-off on top of a nanometer sized aluminum layer, without having most of the Al removed during development of the photoresist pattern.
Lengthening sidechains on tetraalkylammonium is an option. Also, Use of tetralkylammonium silicate, either directly, or as an additive in TMAH, might help.
AZ® Developer is optimized for minimum Aluminium attack/erosion and is typically applied 1:1 diluted in DI H2O for high contrast, or undiluted for high throughput.
See http://www.photoresists.eu/photoresist_1212.html