I want to know the charge property of the thin film of SIO2 deposited by plasma etching on Si wafers.
In contrast to thermally grown SiO2, which is positively charged, the plasma enhanced deposition of SiO2 might result in a negative charge. This can be caused due to oxidation of the silicon surface by the plasma. But: To measure is to know.
Thank you for your answer :)
how can you measure thickness of deposited films from QCM data?
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