If you are using SiH4 to deposit (CVD) a silicon coating on the Al surface  then the silicon will quickly form a native oxide as well.

Chlorosilanes can etch away the oxide layer. Whether they prevent oxide formation or not once they are bonded to the surface, I cannot directly address.

whether you use chlorosilanes like dichlorosilanes like dichlorosilane, trichlorosilane or silicon tetrachloride as your source gas it still provides a silicon layer that will form a native oxide. The chlorine in the source gas could etch/pit the Al and requirea significantly higher decomposition and deposition temperatures than the non-Cl based silanes as well.  There are ways to chemically remove the native oxide on the Si leaving a stable H-terminated surface for a reasonable amount of time in air until the next process step occurs.  A lot of this does depend on thermal budget and what the next process step is.