I am trying to calculate magnetic ion beam rigidity of Silicon ion for different charge states. I wonder if when the ion beam pass through the stripper gas column what are the possible charge states for Si. Is it possible to achieve charge states up to 14+? What are the limitations to it?
Sarvesh Kumar
Alrik Stegmaier
, agree with you, But That also depends on the requirement of the person, if they want a temporary solution or permanent one ? For temporary solution, could be by using thin stripper foils of carbon( few micro gram/cm^2 ) ( Could be single stripper foil or multiple foils at certain distances , that depends on requirement of your desired charge state)(A classical one) that will also increase the charge state of high energy beam, where energy loss will be less than 10%. This comes with a draw back of energy spread. ( Energy loss estimation can simply be done using softwares like SRIM). This case works pretty well, if you dont want to use singletron and other methods or bare nuclei, and can simply avoid complication of things. Although you will need to focus you beam again as it will diverge after passing through the foil. And keep changing these carbon stripper foils time to time. If you want a permanent solution, there are several methods to do that.Some of them can be found in the attachments.
http://www.lnl.infn.it/~spes/spes_publ/tesi_posocco/Chapter4.pdf
http://accelconf.web.cern.ch/AccelConf/HB2014/papers/tho1ab02.pdf
It is recommended to go through the literature and choose the best one suited for your application.
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