I am searching for common methods used with organic devices as well as cost effective methods and equipment.
meanwhile i have an oscilloscope, but i am trying to find out how i should connect it with my organic phototransistor sample to view the drain current with time on the x axis
appreciate all contributions
Hello Alaa J Mahrath,
it is a lateral top contact-bottom gate OFET structure on ITO patterned glass substrate, it uses a hybrid QD/organic material as the active layer.
I considered using a basic setup and connecting it with a resistor and measuring voltage across with the oscilloscope, then i can just calculate the current response.
However, would that give accurate measurement? and is there a chance i could damage my device?
if there are other ways to do this through other equipment it would be great.
Dear Sara,
welcome,
In order to characterize any type of transistor including the organic FET transistor, you measure its DC i-v characteristic. The typical performance is obtained by measuring the drain output characteristics which is the drain current ID as a function of VDS for certain values of VGS. One can measure the DC transfer characteristics of the transistor which is ID= f(vgs and different values of VDS). The transfer characteristics is an indicator for the controlling effect of VGS.
There also the small signal parameters and the switching parameters. Only the switching measurements needs an oscilloscope. The transistor is connected as an inveter and one measures the the on and off time of the transistor in this circuit.
When you fabricate a transistor the most straight forward action is to measure its static characteristic to judge how far it works satisfactory.
What is the expected I-V characteristics of your transistor? i mean what is its operating voltage range?
To measure the static characteristics of the transistor there are many instruments including the semiconductor parameter analyzers. which is a classical laboratory equipment.
Best wishes
Dear Sara,
I think it is possible. I used DPO 3052 Tektronix Digital Phosphor Oscilloscope for transient current/voltage measurement of my solar cell devices in ns scale.
best wishes,
Dear Professor Abdelhalim,
i measure the I-V charactaristic of the device under gate voltage sweep -50 to 50 using the semiconductor parameter anayzer. my aim is to measure the photoresponse (drain current vs gate current under light illumination) under similar sweep but i was looking for a way to perform it with the oscilloscope instead of using the parameter analyzer
Hello Randi,
I can measure the voltage vs time and just plug the data with the resistance in ohm's law to ge the current vs time
however, my main concern is the range of measurement achievable ? because my OFET shows drain current up to 10 ^-5 or slightly higher
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