Traditionally, type of intrinsic (i.e. not induced by impurities) electronic conductivity is determined by nonstoichiometry of oxide under consideration: metal-excess or oxygen excess phase.
As far as I remember, CuO synthezised at moderate oxygen partial pressure is oxygen deficient phase and can be described by follow equation (equation is written for MO oxide)
«O» ↔ ½ O2 + V●●O + 2 e′
V●●O - oxygen vacancies
e′ - electrons
You can see that evolution of oxygen is accompanied by formation of oxygen vacancies (with effecctive positive charge) and electrons that determine n-type of conductivity.
So if we discuss intrinsic electronic conductivity (as a rule at moderate or low oxygen partial pressure) CuO should be n-type semiconductor.
If Cu2O is under consideration its nonstoichiometry is connected with formation of metal vacancies and can be described by follow equation (equation is written for MO oxide)
½ O2 ↔ OxO + V′′M + 2 h●
OxO - oxygen in regular positions of the lattice
V′′M - metal vacancies
2 h● - holes
In case of metal deficient phase (or oxygen excess phase) generation of acceptor metal vacancies-hence, holes-occurs and substance (Cu2O) has p-type of intrinsic conductivity
To clarify situtation you should put attention to exact formula of compound (some authors forget to denote it), synthesis conditions (oxygen pressure, temperature, pure compound or modified by impurity) and conditions of conductivity measurments (oxygen pressure, temperature).
General rules for determination of type conductivity of oxides (with Brouwer's diagrams) you can find in book /Defects in Solids/Richard J. D. Tilley/ISBN: 978-0-470-07794-8.
Also you can see the following link as starting point of discussion http://www.academia.edu/6031652/Oxidation_of_Copper_and_Electronic_Transport_in_Copper_Oxides
Traditionally, type of intrinsic (i.e. not induced by impurities) electronic conductivity is determined by nonstoichiometry of oxide under consideration: metal-excess or oxygen excess phase.
As far as I remember, CuO synthezised at moderate oxygen partial pressure is oxygen deficient phase and can be described by follow equation (equation is written for MO oxide)
«O» ↔ ½ O2 + V●●O + 2 e′
V●●O - oxygen vacancies
e′ - electrons
You can see that evolution of oxygen is accompanied by formation of oxygen vacancies (with effecctive positive charge) and electrons that determine n-type of conductivity.
So if we discuss intrinsic electronic conductivity (as a rule at moderate or low oxygen partial pressure) CuO should be n-type semiconductor.
If Cu2O is under consideration its nonstoichiometry is connected with formation of metal vacancies and can be described by follow equation (equation is written for MO oxide)
½ O2 ↔ OxO + V′′M + 2 h●
OxO - oxygen in regular positions of the lattice
V′′M - metal vacancies
2 h● - holes
In case of metal deficient phase (or oxygen excess phase) generation of acceptor metal vacancies-hence, holes-occurs and substance (Cu2O) has p-type of intrinsic conductivity
To clarify situtation you should put attention to exact formula of compound (some authors forget to denote it), synthesis conditions (oxygen pressure, temperature, pure compound or modified by impurity) and conditions of conductivity measurments (oxygen pressure, temperature).
General rules for determination of type conductivity of oxides (with Brouwer's diagrams) you can find in book /Defects in Solids/Richard J. D. Tilley/ISBN: 978-0-470-07794-8.
Also you can see the following link as starting point of discussion http://www.academia.edu/6031652/Oxidation_of_Copper_and_Electronic_Transport_in_Copper_Oxides
To trust to memory that is potential reason of discrepancy of CuO conductivity in reports;))) In addition to the above some discrepancies may be induced by a gap between academic knowledge and practioner one (frequently, as a personal knowledge). So I agree with Ajay Kumar Mahato. To confirm p-type conductivity of CuO you can refer to Jeong, Y. K., & Choi, G. M. (1996). Nonstoichiometry and electrical conduction of CuO. Journal of Physics and Chemistry of Solids, 57(1), 81-84 (http://www.sciencedirect.com/science/article/pii/0022369795001301)